ME60N03AS

ME60N03AS 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A ≦ 9mΩ RDS(ON), Vgs@ 5V,Ids@15A ≦18mΩ APPLICATIONS ● Motherboard (V-Core) ● DC/DC Converter ● Load Switch ● LCD Display inverter ● IPC FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150℃)* Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃ Symbol VDSS VGSS ID IDM PD TJ, Tstg EAS RθJA RθJC Limit 25 ±20 53 100 40 25 -55 to 150 50 T≦10 sec Steady State 3.1 15 40 Unit V V A A W ℃ mJ ℃/W ℃/W Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.1mH,Rg=25Ω) Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Sep, 2008 – Version 2.1 Free Datasheet http://www.datasheet4u.net/ 01 ME60N03AS 25V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) DYNAMIC Qg Qg Qgs Qgd Ciss Coss Crss Rg Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay T...