PD - 97577
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switchi...
PD - 97577
INSULATED GATE BIPOLAR
TRANSISTOR Features
Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package
IRGP4066PbF IRGP4066-EPbF
C
VCES = 600V IC(Nominal) = 75A
G E
tSC ≥ 5μs, TJ(max) = 175°C
n-channel
VCE(on) typ. = 1.7V
Benefits
High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation
C E C G TO-247AC IRGP4066PbF
C
E C G TO-247AD IRGP4066-EPbF
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Max.
600 140 90 75 225 300 ±20 ±30 454 227 -55 to +175
Units
V
c
A V W
°C
Therma...
