119N03SG

BSC119N03S G OptiMOS®2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Pb-free plating; RoHS compliant Type BSC119N03S G Package P-TDSON-8 Ordering Code Q7042 S4292 1) Product Summary V DS R DS(on),max ID 30 11.9 30 V mΩ A P-TDSON-8 Marking 119N03S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W 2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation I D,pulse E AS dv /dt V GS P tot T C=25 °C T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.01 page 1 T j, T stg T C=25 °C3) I D=30 A, R GS=25 Ω I D=30 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Value 30 30 11.9 120 60 6 ±20 43 2.8 -55 ... 150 55/150/56 2004-12-15 Free Datasheet http://www.datasheet4u.net/ Unit A mJ kV/µs V W °C BSC119N03S G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area2) 2.9 62 45 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise speci...