2SA1029, 2SA1030
Silicon PNP Epitaxial
Application
• Low frequency amplifier • Complementary pair with 2SC458 and 2SC23...
2SA1029, 2SA1030
Silicon
PNP Epitaxial
Application
Low frequency amplifier Complementary pair with 2SC458 and 2SC2308
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
Free Datasheet http://www.datasheet4u.net/
2SA1029, 2SA1030
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1029 –30 –30 –5 –100 100 300 150 –55 to +150 2SA1030 –55 –50 –5 –100 100 300 150 –55 to +150 Unit V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
2SA1029 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE*
1
2SA1030 Max — — — –0.5 –0.5 500 –0.8 –0.2 — 4.0 Min –55 –50 –5 — — 100 — — 200 — Typ — — — — — — — — 280 3.3 Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCB = –12 V, I C = –2 mA VCB = –10 V, IE = 0, f = 1 MHz
Min –30 –30 –5 — — 100 — — 200 —
Typ — — — — — — — — 280 3.3
Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat)
Gain bandwidth...