FDA59N25

FDA59N25 — N-Channel UniFETTM MOSFET FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A Low Gate Charge (Typ. 63 nC) Low Crss (Typ. 70 pF) 100% Avalanche Tested RoHS Compliant Applications PDP TV Uninterruptible Power Supply AC-DC Power Supply April 2014 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G D S TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain to Source Voltage VDS(Avalanche) Repetitive Avalanche Voltage VGSS ID Gate to Source Voltage Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1,2) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Para...