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2SD363

Part Number	2SD363
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Features	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector Pow...
Published	Jan 28, 2014
Datasheet	2SD363 PDF File

Features

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC...

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