Green Product
STM8324
Ver 1.0
S a mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor ( N and ...
Green Product
STM8324
Ver 1.0
S a mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect
Transistor ( N and P Channel )
PRODUCT SUMMARY (N-Channel)
V DSS
30V
PRODUCT SUMMARY (P-Channel)
V DSS
-30V
ID
6.5A
R DS(ON) (m Ω) Max
31 @ VGS=10V
ID
-6A
R DS(ON) (m Ω) Max
35 @ VGS=-10V 53 @ VGS=-4.5V
42 @ VGS=4.5V
D2 D2
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1 D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
N-Channel 30 ±20 TA=25°C TA=70°C 6.5 5.2 24 12 TA=25°C TA=70°C 2 1.28
P-Channel -30 ±20 -6 -4.8 -22 64
Units V V A A A mJ W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
-55 to 150
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
62.5
°C/W
Details are subject to change without notice.
Feb,04,2009
1
www.samhop.com.tw
Free Datasheet http://www.datasheet4u.com/
STM8324
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units V 1 ±10 uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS=0V , ID=250uA VDS=24V , VGS=0V
30
VGS= ±20V , VDS=0V
VDS=VGS ,...