Silicon N-Channel Power F-MOS FET
Power F-MOS FETs
2SK2960
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 250...
Description
Power F-MOS FETs
2SK2960
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
M Di ain sc te on na tin nc ue e/ d
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2
s Applications
13.7–0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1
2.6±0.1
0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Symbol Drain to Source breakdown voltage Gate to Source voltage Drain current VDSS VGSS ID IDP
DC
Pulse
Avalanche energy capacity Allowable power dissipation
TC = 25°C Ta = 25°C
Channel temperature Storage temperature
*
L = 5mH, IL = 10A, 1 pulse
s Electrical Characteristics (TC = 25°C)
Parameter Symbol Drain to Source cut-off current Gate to Source leakage current IDSS IGSS Vth
Drain to Source breakdown voltage Gate threshold voltage
Pl
Drain to Source ON-resistance Forward transfer admittance Diode forward voltage
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss td(on) tr td(off) tf VGS = 10V, ID = 5A VDD = 100V, RL = 20Ω VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time
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