SI4456DY

Si4456DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0038 at VGS = 10 V 0.0045 at VGS = 4.5 V ID (A)a 33 31 Qg (Typ.) 37.5 nC FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Gen II Power MOSFET 100 % Rg and UIS Tested APPLICATIONS Secondary Rectification Point of Load SO-8 D S S S G 1 2 3 4 Top View S Ordering Information: Si4456DY-T1-E3 (Lead (Pb)-free) Si4456DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 40 ± 20 33 27 23b, c 18b, c 70 7.0 3.0b, c 40 80 7.8 5.0 3.5b, c 2.2b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 80 °C/W. Document Number: 73852 S09-0138-Rev. B, 02-Feb-0...