2SC6060

2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Power Amplifier Applications Driver Stage Amplifier Applications ・High-transition frequency: fT = 100 MHz (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 230 230 5 1.0 2.0 100 2 20 150 −55 to 150 Unit V V V A A mA W W °C °C 1: BASE 2: COLLECTOR 3: EMITTER JEDEC JEITA TOSHIBA ― SC-67 2-10U1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2008-11-07 Free Datasheet http://www.datasheet4u.com/ 2SC6060 Electrical Characteristics (Tc = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter satur...