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MUN2214T1 Dataheets PDF



Part Number MUN2214T1
Manufacturers Motorola
Logo Motorola
Description NPN SILICON BIAS RESISTOR TRANSISTOR
Datasheet MUN2214T1 DatasheetMUN2214T1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MUN2211T1/D Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these indi.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MUN2211T1/D Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC–59 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. R1 PIN2 R2 BASE (INPUT) PIN1 EMITTER (GROUND) PIN3 COLLECTOR (OUTPUT) MUN2211T1 SERIES Motorola Preferred Devices NPN SILICON BIAS RESISTOR TRANSISTOR 3 2 1 CASE 318D–03, STYLE 1 (SC–59) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector–Base Voltage Collector–Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Symbol VCBO VCEO IC PD Value 50 50 100 *200 1.6 Unit Vdc Vdc mAdc mW mW/°C THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RθJA TJ, Tstg TL 625 – 65 to +150 260 10 °C/W °C °C Sec DEVICE MARKING AND RESISTOR VALUES Device MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1(2) MUN2216T1(2) MUN2230T1(2) MUN2231T1(2) MUN2232T1(2) MUN2233T1(2) MUN2234T1(2) Marking 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 R2 (K) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MUN2211T1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Base Cutoff Current (VCB = 50 V, IE = 0) Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter–Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 ICBO ICEO IEBO — — — — — — — — — — — — — 50 50 — — — — — — — — — — — — — — — 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4..


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