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TSF20H120C Dataheets PDF



Part Number TSF20H120C
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet TSF20H120C DatasheetTSF20H120C Datasheet (PDF)

creat by ART TSF20H120C Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-.

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