ST 2SD966
NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor ...
ST 2SD966
NPN Silicon Epitaxial Planar
Transistor for low-frequency power amplification and stroboscope. The
transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25OC) Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Peak Collector Current Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO ICP IC Pc Tj TS Value 40 20 7 8 5 1 150 -55 to +150 Unit V V V A A W
O O
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
Free Datasheet http://www.datasheet4u.com/
ST 2SD966
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=2V, IC=0.5A P Q R at VCE=2V, IC=2A Collector Cutoff Current at VCB=10V Emitter Cutoff Current at VEB=7V Collector Output Capacitance at VCB=20V,f=1.0MHz Collector to Emitter Voltage at IC=1mA Emitter to Base Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=3A,IB=0.1A Transition Frequency at VCB=6V, IE=-50mA,f=200MHz fT 150 MHz VCE(sat) 1 V VEBO 7 V VCEO 20 V Cob 50 pF IEBO 0.1 μA ICBO 0.1 μA hFE hFE hFE hFE 120 230 340 150 250 380 600 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings...
