2SD965

ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ․Low collector-emitter saturation voltage ․Satisfactory operation performances at high efficiency with the low voltage power supply TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Collector Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO ICP IC Ptot Tj TS Value 40 20 7 8 5 750 150 -55 to +150 Unit V V V A A mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2003 Free Datasheet http://www.datasheet4u.com/ ST 2SD965 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=2V, IC=0.5A P Q R at VCE=2V, IC=1A Collector Cutoff Current at VCB=10V Collector Cutoff Current at VCE=10V Emitter Cutoff Current at VEB=7V Collector Output Capacitance at VCB=20V, f=1MHz (Common base, input open circuited) Collector to Emitter Voltage at IC=1mA Emitter to Base Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=3A, IB=0.1A Current Gain Bandwidth Product at VCB=6V, IE= -50mA, f=200MHz fT 150...