Document
ST 2SD882U-P
NPN SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in medium power linear and switching applications
TO-126 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation at TA = 25 OC Power Dissipation at TC = 25 OC Operating and Storage Temperature Range
Symbol VCBO VCES VCEO VEBO IC ICM IB PD PD TS
Value 120 100 100 6 4 7 1 1.25 36 - 65 to + 150
Unit V V V V A A A mW mW
O
C
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 500 mA at VCE = 1 V, IC = 2 A at VCE = 2 V, IC = 1 A at VCE = 5 V, IC = 10 mA Collector Base Cutoff Current at VCB = 120 V Collector Emitter Cutoff Current at VCE = 100 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Breakdown Voltage at IC = 1 mA Collector Emitter Saturation Voltage at IC = 2 A, IB = 200 mA Base Emitter On Voltage at VCE = 1 V, IC = 2 A Transition Frequency at VCE = 1 V, IC = 250 mA
Symbol hFE hFE hFE hFE ICBO ICES IEBO V(BR)CEO VCE(sat) VBE(on) fT
Min. 100 15 100 15 100 3
Max. 260 260 100 100 1 0.8 1.5 -
Unit µA µA mA V V V MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/06/2008 CD
Free Datasheet http://www.datasheet4u.com/
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