ST2SD468

ST 2SD468 NPN Silicon Epitaxial Planar Transistor Low Frequency Power amplifier applications. The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IcM Ptot Tj TS Value 25 20 5 1 1.5 0.9 150 -55 to +150 Unit V V V A A W O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 Free Datasheet http://www.datasheet4u.com/ ST 2SD468 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=2V, IC=0.5A Current Gain Group B C hFE hFE 85 120 170 240 Min. Typ. Max. Unit Collector Emitter Breakdown Voltage at IC=1mA Collector Base Breakdown Voltage at IC=10μA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=20V Collector Saturation Voltage at IC=0.8A, IB=0.08A Base Emitter Voltage at VCE=2V, Ic=0.5A Collector Output Capacitance at VCB=10V, f=1MHz Transition Frequency at VCE=2V, IC=0.5A fT 190 MHz COB 22 pF VBE 0.79 1 V VCE(sat) 0.2 0.5 V ICBO 1 μA V(BR)EBO 5 V V(BR)CBO 25 V V(BR)CEO 20 V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech...