2SC2320
Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications NPN Epitaxial Planar Silicon Tra...
2SC2320
Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications
NPN Epitaxial Planar Silicon
Transistor
Excellent hFE Linearity Complementary to 2SA999
6.2 MAX.
5.6 MAX.
Unit : mm
4.6 4.4 MAX. 1.5 1 2 3 0.45 10.5 MIN.
MAXIMUM RATINGS (Ta = 25 °C) CHARACTERISTIC
Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL RATING UNIT
VCBO VEBO VCEO Ic Pc Tj Tstg
50 6 50 200 300 125 -55~+125
V V V mA
mW
1 : Emitter 2 : Collector 3 : Base
1.25 1 2 3
1.25
°C °C
EIAJ : SC-43 JEDEC : TO-92
ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC
Collector-Emitter Breakdown Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNIT.
V(BR)CEO Ic = 100μA, RBE = ∞ ICBO IEBO
hFE hFE
50 0.1 0.1 90 50 0.3 200 3,5 2 800
Collector Cut-off current Emitter Cut-off current DC Current Gain DC Current Gain
Collector-Emitter Saturation Voltage
VCB = 50V, IE = 0 VEB = 6V, Ic = 0 VCE = 6V, Ic = 1mA VCE = 6V, Ic = 0,1mA
V μA μA
VCE(sat) Ic = 100mA, IB = 10mA
V MHz pF dB
Transition Frequency Collector Output Capacitance Noise Figure
fT
Cob NF
VCE = 6V, IE = 10mA VCB = 6V, IE = 0, f = 1MHz VCE = 6V, IE = 0,3mA
f = 100Hz, RG = 10kΩ
Rank hFE D E F
hFE Rank classification :
G
90~180 150~300 250~500 400~800
MITSUBISHI ELECTRIC
Free Datasheet http://www.datasheet4u.com/
2SC2320
MITSUBISHI ELECTRIC
Free Datasheet http://www.datasheet4u.com/
...