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RT3K33M Dataheets PDF



Part Number RT3K33M
Manufacturers Isahaya Electronics
Logo Isahaya Electronics
Description Composite Transistor
Datasheet RT3K33M DatasheetRT3K33M Datasheet (PDF)

RT3K33M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K33M is a composite transistor built with two INK0003AX chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit:mm FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=0.6~1.2V ・Low on Resistance. Ron=0.9Ω(TYP) ・High speed switching. ・Small package for easy mounting. 2.0 APPLICATION high s.

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RT3K33M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K33M is a composite transistor built with two INK0003AX chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit:mm FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=0.6~1.2V ・Low on Resistance. Ron=0.9Ω(TYP) ・High speed switching. ・Small package for easy mounting. 2.0 APPLICATION high speed switching , Analog switching 0.65 0.13 0~0.1 ⑤ Tr.1 0.9 0.65 ⑥ ④ Tr.2 TERMINAL CONNECTOR ①:SOURCE1 ②:GATE1 ③:DRAIN2 ④:SOURCE2 ⑤:GATE2 ⑥:DRAIN1 JEITA:SC-88 ① ② ③ MAXIMUM RATING (Ta=25℃) SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING 20 UNIT V V mA mW ℃ ℃ 6 5 4 MARKING Drain-source voltage Gate-source voltage Drain current Total power dissipation(Ta=25℃) Channel temperature Range of Storage temperature ±8 200 150 +125 -55~+125 . 3 .K3 1 2 3 ISAHAYA ELECTRONICS CORPORATION Free Datasheet http://www.datasheet4u.com/ RT3K33M Composite Transistor For high speed switching Silicon N-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time I D=100μA, V V V V GS =0V 20 GS 300 0.9 34 8.5 14 85 ±0.5 50 1.2 - V μA μA V mS Ω pF pF ns GS=±5V, VDS=0V DS =20V ,VGS=0V DS= V I D=250μA, V DS 0.6 - | Yfs | RDS(ON) Ciss Coss tON tOFF =10V, I D=0.1A I D=100mA, V GS=4.0V V DS=10V, V GS=0V,f=1MHz V V V DS =10V, V GS =0V,f=1MHz DD =5V , I D = 10mA GS=0~5V Switching time test condition test circuit 5V IN OUT 5V 90% RL 0 10μs VDD=5V D.U.≦1% Common source Ta=25℃ 50Ω VDD input waveform 0V VDD 10% 10% output waveform VDS(ON) ton 90% tr toff tf ISAHAYA ELECTRONICS CORPORATION Free Datasheet http://www.datasheet4u.com/ TYPICAL CHARACTERISTICS Ta=25℃ 100 1.6V 1.5V 1.4V ID -VDS Ta=25℃ 1 1.0V ID -VDS(Low voltage region) 80 Drain current ID (mA) Drain current ID (mA) 0.8 60 1.3V 0.6 0.95V 40 1.2V 0.4 0.9V 20 1.1V VGS=1.0V 0.2 0.85V VGS=0.8V 0 0 2 4 6 Drain-Source voltage VDS (V) 0 10 0 0.1 0.2 0.3 Drain-Source voltage VDS (V) 8 0.4 0.5 IDR -VDS 100 Drain reverse current IDR (mA) Ta=25℃ VGS=0V Drain current ID (mA) 100 1000 Ta=25℃ VDS=10V ID -VGS 10 10 1 -0 -0.5 -1 -1.5 -2 Drain-Source voltage VDS (V) 1 0 1 2 3 4 5 Gate-Source voltage VGS (V) |Yfs| - ID 1000 Forward transfer admittance |Yfs| (mS) Ta=25℃ VDS=10V Drain-Source ON voltage VDS(ON) (mV) 100 100 1000 Ta=25℃ VGS=4V VDS(ON) -ID 10 10 1 1 1 10 100 1000 Drain current ID (mA) 0.1 1 10 Drain current ID (mA) 100 t - ID 10000 Ta=25℃ toff Switching time t (ns) Capacitance C (pF) 1000 100 C - VDS Ciss tf 100 10 Coss 10 ton tr Ta=25℃ VGS=0V 1 0.1 1 10 1.


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