Document
RT3K33M
Composite Transistor For high speed switching Silicon N-channel MOSFET
DESCRIPTION
RT3K33M is a composite transistor built with two INK0003AX chips in SC-88 package.
OUTLINE DRAWING
2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2
Unit:mm
FEATURE
・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=0.6~1.2V ・Low on Resistance. Ron=0.9Ω(TYP) ・High speed switching. ・Small package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
0.65 0.13 0~0.1
⑤
Tr.1
0.9
0.65
⑥
④
Tr.2
TERMINAL CONNECTOR ①:SOURCE1 ②:GATE1 ③:DRAIN2 ④:SOURCE2 ⑤:GATE2 ⑥:DRAIN1 JEITA:SC-88
①
②
③
MAXIMUM RATING (Ta=25℃)
SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING 20 UNIT V V mA mW ℃ ℃
6 5 4
MARKING
Drain-source voltage Gate-source voltage Drain current Total power dissipation(Ta=25℃) Channel temperature Range of Storage temperature
±8 200
150 +125 -55~+125
. 3 .K3
1 2 3
ISAHAYA ELECTRONICS CORPORATION
Free Datasheet http://www.datasheet4u.com/
RT3K33M
Composite Transistor For high speed switching Silicon N-channel MOSFET
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit
Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time
I D=100μA, V V V V
GS
=0V
20 GS
300 0.9 34 8.5 14 85
±0.5 50 1.2 -
V μA μA V mS Ω pF pF ns
GS=±5V, VDS=0V DS
=20V ,VGS=0V
DS= V
I D=250μA, V
DS
0.6 -
| Yfs |
RDS(ON) Ciss Coss tON tOFF
=10V, I D=0.1A
I D=100mA, V GS=4.0V V DS=10V, V GS=0V,f=1MHz V V V
DS
=10V, V
GS
=0V,f=1MHz
DD =5V , I D = 10mA GS=0~5V
Switching time test condition
test circuit
5V IN
OUT
5V
90%
RL 0 10μs VDD=5V D.U.≦1% Common source Ta=25℃ 50Ω VDD
input waveform
0V VDD
10%
10%
output waveform
VDS(ON)
ton
90%
tr toff tf
ISAHAYA ELECTRONICS CORPORATION
Free Datasheet http://www.datasheet4u.com/
TYPICAL CHARACTERISTICS
Ta=25℃ 100
1.6V 1.5V 1.4V
ID -VDS Ta=25℃ 1
1.0V
ID -VDS(Low voltage region)
80 Drain current ID (mA) Drain current ID (mA)
0.8
60
1.3V
0.6
0.95V
40
1.2V
0.4
0.9V
20
1.1V VGS=1.0V
0.2
0.85V VGS=0.8V
0 0 2 4 6 Drain-Source voltage VDS (V)
0 10 0 0.1 0.2 0.3 Drain-Source voltage VDS (V)
8
0.4
0.5
IDR -VDS 100 Drain reverse current IDR (mA) Ta=25℃ VGS=0V Drain current ID (mA) 100 1000 Ta=25℃ VDS=10V
ID -VGS
10
10
1 -0 -0.5 -1 -1.5 -2 Drain-Source voltage VDS (V)
1 0 1 2 3 4 5 Gate-Source voltage VGS (V)
|Yfs| - ID 1000 Forward transfer admittance |Yfs| (mS) Ta=25℃ VDS=10V Drain-Source ON voltage VDS(ON) (mV) 100 100 1000 Ta=25℃ VGS=4V
VDS(ON) -ID
10
10
1
1 1 10 100 1000 Drain current ID (mA)
0.1 1 10 Drain current ID (mA) 100
t - ID 10000 Ta=25℃ toff Switching time t (ns) Capacitance C (pF) 1000 100
C - VDS
Ciss tf
100
10 Coss
10
ton tr
Ta=25℃ VGS=0V 1 0.1 1 10 1.