Document
RT3K22M
Composite Transistor For high speed switching Silicon N-channel MOSFET
DESCRIPTION
RT3K22M is a composite transistor built with two INK0002AX chips in SC-88 package.
OUTLINE DRAWING
2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2
Unit:mm
FEATURE
・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=0.6~1.2V ・Low on Resistance. Ron=1.1Ω(TYP) ・High speed switching. ・Small package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
0.65 0.13 0~0.1
⑤
Tr.1
0.9
0.65
⑥
④
Tr.2
TERMINAL CONNECTOR ①:SOURCE1 ②:GATE1 ③:DRAIN2 ④:SOURCE2 ⑤:GATE2 ⑥:DRAIN1 JEITA:SC-88
①
②
③
MAXIMUM RATING (Ta=25℃)
SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING 30 UNIT V V mA mW ℃ ℃
6 5 4
MARKING
Drain-source voltage Gate-source voltage Drain current Total power dissipation(Ta=25℃) Channel temperature Range of Storage temperature
±8 200
150 +125 -55~+125
. 2 .K2
1 2 3
ISAHAYA ELECTRONICS CORPORATION
Free Datasheet http://www.datasheet4u.com/
RT3K22M
Composite Transistor For high speed switching Silicon N-channel MOSFET
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit
Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time
I D=100μA, VGS=0V V V V
GS=±5V, VDS=0V DS
30 GS
300 1.1 33 6.8 12 80
±0.5 50 1.2 -
V μA μA V mS Ω pF pF ns
=30V ,VGS=0V
DS= V
I D=250μA, V
DS
0.6 -
| Yfs |
RDS(ON) Ciss Coss tON tOFF
=10V, I D=0.1A
I D=100mA, V GS=4.0V V DS=10V, V GS=0V,f=1MHz V V V
DS
=10V, V
GS
=0V,f=1MHz
DD =5V , I D =10mA GS=0~5V
Switching time test condition
test circuit
5V IN
OUT
5V
90%
RL 0 10μs VDD=5V D.U.≦1% Common source Ta=25℃ 50Ω VDD
input waveform
0V VDD
10%
10%
output waveform
VDS(ON)
ton
90%
tr toff tf
ISAHAYA ELECTRONICS CORPORATION
Free Datasheet http://www.datasheet4u.com/
TYPICAL CHARACTERISTICS
Ta=25℃ 100
1.6V 1.5V
ID -VDS 1
1.4V
Ta=25℃
ID -VDS(Low voltage region)
1.0V
80 Drain current ID (mA) Drain current ID (mA)
1.3V
0.8
0.95V
60
0.6
40
1.2V
0.4
0.9V
20
1.1V VGS=1.0V
0.2
0.85V VGS=0.8V
0 0 2 4 6 8 10 Drain-Source voltage VDS (V)
0 0 0.1 0.2 0.3 Drain-Source voltage VDS (V)
0.4
0.5
IDR -VDS 100 Drain reverse current IDR (mA) Ta=25℃ VGS=0V Drain current ID (mA) 1000 Ta=25℃ VDS=10V
ID -VGS
100
10
10
1 -0 -0.5 -1 -1.5 -2 Drain-Source voltage VDS (V)
1 0 1 2 3 4 5 Gate-Source voltage VGS (V)
|Yfs| - ID 1000 Forward transfer admittance |Yfs| (mS) Ta=25℃ VDS=10V Drain-Source ON voltage VDS(ON) (mV) 1000 Ta=25℃ VGS=4V
VDS(ON) -ID
100
100
10
10
1 1 10 100 1000 Drain current ID (mA)
1 1 10 Drain current ID (mA) 100
t - ID 10000 Ta=25℃ toff 1000 Switching time t (ns) tf Capacitance C (pF) 100
C - VDS
Ciss
100
10
Coss
10
ton tr
Ta=25℃ VGS=0V 1 1 10 100 0.1 1 10 Drain-Source voltage VDS (V) 100
1 0.1 Drain current ID (mA)
ISAHAYA ELECTRONICS CORPORATION
Free Datasheet http://www.datasheet4u.com/
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