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RT3K22M Dataheets PDF



Part Number RT3K22M
Manufacturers Isahaya Electronics
Logo Isahaya Electronics
Description Composite Transistor
Datasheet RT3K22M DatasheetRT3K22M Datasheet (PDF)

RT3K22M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K22M is a composite transistor built with two INK0002AX chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit:mm FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=0.6~1.2V ・Low on Resistance. Ron=1.1Ω(TYP) ・High speed switching. ・Small package for easy mounting. 2.0 APPLICATION high s.

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RT3K22M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K22M is a composite transistor built with two INK0002AX chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit:mm FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=0.6~1.2V ・Low on Resistance. Ron=1.1Ω(TYP) ・High speed switching. ・Small package for easy mounting. 2.0 APPLICATION high speed switching , Analog switching 0.65 0.13 0~0.1 ⑤ Tr.1 0.9 0.65 ⑥ ④ Tr.2 TERMINAL CONNECTOR ①:SOURCE1 ②:GATE1 ③:DRAIN2 ④:SOURCE2 ⑤:GATE2 ⑥:DRAIN1 JEITA:SC-88 ① ② ③ MAXIMUM RATING (Ta=25℃) SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING 30 UNIT V V mA mW ℃ ℃ 6 5 4 MARKING Drain-source voltage Gate-source voltage Drain current Total power dissipation(Ta=25℃) Channel temperature Range of Storage temperature ±8 200 150 +125 -55~+125 . 2 .K2 1 2 3 ISAHAYA ELECTRONICS CORPORATION Free Datasheet http://www.datasheet4u.com/ RT3K22M Composite Transistor For high speed switching Silicon N-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time I D=100μA, VGS=0V V V V GS=±5V, VDS=0V DS 30 GS 300 1.1 33 6.8 12 80 ±0.5 50 1.2 - V μA μA V mS Ω pF pF ns =30V ,VGS=0V DS= V I D=250μA, V DS 0.6 - | Yfs | RDS(ON) Ciss Coss tON tOFF =10V, I D=0.1A I D=100mA, V GS=4.0V V DS=10V, V GS=0V,f=1MHz V V V DS =10V, V GS =0V,f=1MHz DD =5V , I D =10mA GS=0~5V Switching time test condition test circuit 5V IN OUT 5V 90% RL 0 10μs VDD=5V D.U.≦1% Common source Ta=25℃ 50Ω VDD input waveform 0V VDD 10% 10% output waveform VDS(ON) ton 90% tr toff tf ISAHAYA ELECTRONICS CORPORATION Free Datasheet http://www.datasheet4u.com/ TYPICAL CHARACTERISTICS Ta=25℃ 100 1.6V 1.5V ID -VDS 1 1.4V Ta=25℃ ID -VDS(Low voltage region) 1.0V 80 Drain current ID (mA) Drain current ID (mA) 1.3V 0.8 0.95V 60 0.6 40 1.2V 0.4 0.9V 20 1.1V VGS=1.0V 0.2 0.85V VGS=0.8V 0 0 2 4 6 8 10 Drain-Source voltage VDS (V) 0 0 0.1 0.2 0.3 Drain-Source voltage VDS (V) 0.4 0.5 IDR -VDS 100 Drain reverse current IDR (mA) Ta=25℃ VGS=0V Drain current ID (mA) 1000 Ta=25℃ VDS=10V ID -VGS 100 10 10 1 -0 -0.5 -1 -1.5 -2 Drain-Source voltage VDS (V) 1 0 1 2 3 4 5 Gate-Source voltage VGS (V) |Yfs| - ID 1000 Forward transfer admittance |Yfs| (mS) Ta=25℃ VDS=10V Drain-Source ON voltage VDS(ON) (mV) 1000 Ta=25℃ VGS=4V VDS(ON) -ID 100 100 10 10 1 1 10 100 1000 Drain current ID (mA) 1 1 10 Drain current ID (mA) 100 t - ID 10000 Ta=25℃ toff 1000 Switching time t (ns) tf Capacitance C (pF) 100 C - VDS Ciss 100 10 Coss 10 ton tr Ta=25℃ VGS=0V 1 1 10 100 0.1 1 10 Drain-Source voltage VDS (V) 100 1 0.1 Drain current ID (mA) ISAHAYA ELECTRONICS CORPORATION Free Datasheet http://www.datasheet4u.com/ Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life .


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