DTP1N60

DTL1N60/DTP1N60/DTU1N60 Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 2.7 8.1 Single 600 7 www.din-tek.jp FEATURES Halogen-free According to IEC 61249-2-21 Definition Dynamic dV/dt Rating Repetitive Avalanche Rated Available in Tape and Reel Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC TO-220AB D DPAK (TO-252) D D IPAK (TO-251) G G S G D S G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID LIMIT 600 ± 20 1.4 0.89 0.28 0.020 93 1.4 3.6 36 2.5 3.8 - 55 to + 150 260d UNIT V A Pulsed Drain IDM5.6 Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb EAS Repetitive Avalanche Currenta IAR Repetitive Avalanche Energya EAR Maximum Power Dissipation TC = 25 °C PD Maximum Power Dissipation (PCB Mount)e TA = 25 °C Peak Diode Recovery dV/dtc dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω, IAS = 1.4 A (see fig. 12). c. ISD ≤1.4 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 mate...