AM40N04-30DE

Analog Power N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology AM40N04-30DE PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 32 @ VGS = 10V 40 42 @ VGS = 4.5V ID (A) 33 29 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Symbol Limit Units Parameter VDS 40 Drain-Source Voltage V VGS ±20 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o a o TC=25 C ID 33 40 30 50.0 IDM IS TC=25 C P D A A W o Continuous Source Current (Diode Conduction) Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Case a Maximum 50 3.0 Units o o RθJA RθJC C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM40N04-30DE_A Free Datasheet http://www.datasheet4u.com/ Analog Power AM40N04-30DE SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTE...