N-Channel MOSFET
SUD40N03-18P
N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.018 @ VGS = 10 V 0.027 @ VGS ...
Description
SUD40N03-18P
N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.018 @ VGS = 10 V 0.027 @ VGS = 4.5 V
ID (A)a
"40 "34
D
TO-252
G Drain Connected to Tab G D S
Top View Order Number: SUD40N03-18P S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
30 "20 "40 "28 "100 40 62.5c 7.5b –55 to 175
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientb Junction-to-Case Junction-to-Lead Notes a. Package Limited. b. Surface Mounted on 1” x1” FR4 Board, t v 10 sec. c. See SOA curve for voltage derating. t v 10 sec Steady State
Symbol
RthJA RthJC RthJL
Typical
17 50 2 4
Maximum
20 60 2.4 4.8
Unit
_C/W
_C/W
1/4
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SUD40N03-18P
N-Channel 30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V V...
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