SQD40N06-14L

SQD40N06-14L Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.014 0.017 40 Single D FEATURES TrenchFET® Power MOSFET Package with Low Thermal Resistance AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.freescale.net.cn TO-252 G Drain Connected to Tab G D S S N-Channel MOSFET Top View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD40N06-14L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 °Ca TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 40 29 40 160 32 51 75 25 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJC LIMIT 60 2 UNIT °C/W 1/9 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ SQD40N06-14L Automotive N-Channel 60 V (D-S) 175 °C MOSFET ...