Automotive N-Channel MOSFET
SQD40N06-14L
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) ()...
Description
SQD40N06-14L
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.014 0.017 40 Single
D
FEATURES
TrenchFET® Power MOSFET Package with Low Thermal Resistance AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.freescale.net.cn
TO-252
G
Drain Connected to Tab G D S S N-Channel MOSFET
Top View
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free TO-252 SQD40N06-14L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 °Ca TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 40 29 40 160 32 51 75 25 - 55 to + 175 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJC LIMIT 60 2 UNIT °C/W
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SQD40N06-14L
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
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