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IKW15N120T2

Infineon

IGBT

IKW15N120T2 TrenchStop® 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with so...


Infineon

IKW15N120T2

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Description
IKW15N120T2 TrenchStop® 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel Emitter Controlled Diode C  Short circuit withstand time – 10s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TrenchStop® 2nd generation for 1200 V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior  Easy paralleling capability due to positive temperature coefficient in VCE(sat)  Low EMI PG-TO-247-3  Low Gate Charge  Very soft, fast recovery anti-parallel Emitter Controlled HE Diode  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code IKW15N120T2 1200V 15A 1.75V 175C K15T1202 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current (Tj = 150°C) TC = 25C TC = 110C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  1200V, Tj  175C Diode forward current (Tj = 150°C) TC = 25C TC = 110C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC  600V, Tj, start  175C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Wavesoldering only, temperature on leads onl...




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