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LD2B-5T Dataheets PDF



Part Number LD2B-5T
Manufacturers CENTRONIC
Logo CENTRONIC
Description (LDxx-5T) General Purpose Silicon Sensors
Datasheet LD2B-5T DatasheetLD2B-5T Datasheet (PDF)

General Purpose Silicon Sensors (Series 5T) The Centronic Series 5T detectors offer high blue sensitivity coupled with high shunt resistance and low dark leakage current. They are particularly suited to low light level applications from 430-900 nm where the highest signal to noise ratio is important. They may be operated photovoltaically or with a reverse bias of up to 12V where lower capacitance is needed. The 5T range provides the most economic solution for all applications where high speed of.

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General Purpose Silicon Sensors (Series 5T) The Centronic Series 5T detectors offer high blue sensitivity coupled with high shunt resistance and low dark leakage current. They are particularly suited to low light level applications from 430-900 nm where the highest signal to noise ratio is important. They may be operated photovoltaically or with a reverse bias of up to 12V where lower capacitance is needed. The 5T range provides the most economic solution for all applications where high speed of response above 800 nm is not critical. Electrical / Optical Specifications Characteristics measured at 22°C (±2) ambient, and a reverse bias of 12 volts, unless otherwise stated. Shunt Resistance measured at ± 10mV. For rise time on Quadrants, Linear and Matrix Arrays take figures for single element diodes having equivalent active area Single Elements Type No. Active Area Responsivity A/W λ = 436 nm Min. 0.18 0.18 0.18 0.18 0.18 0.18 0.18 0.18 0.18 0.18 Typ. 0.21 0.21 0.21 0.21 0.21 0.21 0.21 0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820 nm RL = 50 Ω Typ. Package mm2 OSD1-5T 1 OSD3-5T 3 OSD5-5T 5 OSD7.5-5T 7.5 OSD15-5T 15 OSD35-5T 35 OSD50-5T 50 OSD60-5T 62 OSD100-5T 100 OSD300-5T 300 mm 1.13 dia 2.16 x 1.4 2.52 dia 2.75 x 2.75 3.8 x 3.8 5.9 x 5.9 7.98 dia 7.9 x 7.9 11.3 dia 19.54 dia Max. 1 2 2 3 5 10 15 25 30 200 Typ. 0.2 0.5 0.5 1 1 2 5 6 8 30 2.5e-14 3.0e-14 3.3e-14 4.6e-14 5.5e-14 7.5e-14 1.6e-13 2.3e-13 2.1e-13 3.5e-13 Vr=0 V Vr=12V Max. Max. 35 7 80 20 130 35 180 40 390 80 950 200 1300 270 1800 310 2500 520 7500 1500 Quadrants (Values given are per element unless otherwise stated) Type No. mm2 QD7-5T QD50-5T QD100-5T 7 50 100 Active Area Responsivity A/W Dark Current (nA) NEP WHz-½ Capacitance pF Shunt Resistance Crosstalk% Package (Total) λ = 436 nm λ = 436 nm Meg. ohms λ = 900 nm Typ. mm Sep. mm Min. Typ. Max. Typ. Vr=0 V Vr=12V Min. Typ. Max. Typ. Max. Max. 2.99 dia 0.2 0.18 0.21 6 2 2.3e-14 50 15 80 1200 5 1 7 7.98 dia 0.2 0.18 0.21 30 3 4.6e-14 330 80 10 300 5 1 10 11.3 dia 0.2 0.15 0.18 50 5 7.0e-14 650 130 5 100 5 1 11 Linear Arrays (Values given are per element unless otherwise stated) Type No. No. of Elements Responsivity Shunt Resistance NEP WHz-½ Capacitance pF Dark Current Package A/W Megohms λ = 436 nm nA λ = 436 nm Area Width Lgth. Sep. Min. Typ. Min. Typ. Vr=0V Vr=12V Max. Typ. mm2 mm mm mm Min. Typ. 1.00 2.0 0.5 0.05 0.18 0.21 100 1000 2.5e-14 30 6 2 0.7 4 2.02 1.422 1.422 0.45 0.18 0.21 50 1000 2.5e-14 60 12 5 1 4 0.483 1.27 0.38 0.05 0.15 0.18 100 1000 2.9e-14 15 4 2 0.5 2 0.64 0.8 0.8 0.3 0.15 0.18 40 500 4.0e-14 38 10 10 1 6 0.25 0.5 0.5 0.05 0.15 0.18 100 2000 2.0e-14 10 3 5 0.5 21 0.035 0.2 0.175 0.025 0.15 0.18 100 2000 2.0e-14 10 2 5 0.5 20 1.8 2.1 0.9 0.1 0.18 0.21 100 1500 2.0e-14 60 11 5 0.5 16 2.5 2.5 1 0.5 0.18.


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