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TC7PB54FK Dataheets PDF



Part Number TC7PB54FK
Manufacturers Toshiba
Logo Toshiba
Description Single 1-of-3 Demultiplexer
Datasheet TC7PB54FK DatasheetTC7PB54FK Datasheet (PDF)

TC7PB54FC/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PB54FC, TC7PB54FK Single 1-of-3 Demultiplexer with N-channel pull-down MOSFET The TC7PB54 is a single 1-of-3 high-speed CMOS demultiplexer designed for low-voltage applications. The low ON-resistance of the switch allows the input (COM) to be connected to the outputs (Ch0 and Ch1) while maintaining CMOS low power dissipation. The device uses P-channel MOSFETs for the switch block between the input and output pins. The si.

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TC7PB54FC/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PB54FC, TC7PB54FK Single 1-of-3 Demultiplexer with N-channel pull-down MOSFET The TC7PB54 is a single 1-of-3 high-speed CMOS demultiplexer designed for low-voltage applications. The low ON-resistance of the switch allows the input (COM) to be connected to the outputs (Ch0 and Ch1) while maintaining CMOS low power dissipation. The device uses P-channel MOSFETs for the switch block between the input and output pins. The single-input multiplexer can direct the potential supplied on the COM pin to one of the Ch0 to Ch2 pins depending on the combined state of control pins A and B. The unused Chx pins are clamped to ground using an N-channel MOSFET. All inputs are equipped with protection circuits against static discharge. Features • Operating voltage range: VCC = 2 to 3.6 V • High-speed operation: tpd = 70 ns (max) @ 2.7 V • Very low ON-resistance: RON = 3 Ω (max) @ 2.7 V • High latch-up immunity: Higher than or equal to ±300 mA • ESD performance: Machine model ≥ ±200 V Human body model ≥ ±2000 V • Package: CSON8 (CST8), SSOP8 (US8) Pin Assignment (top view) TC7PB54FC A B VCC COM 876 5 TC7PB54FK A B VCC CO 8765 TC7PB54FC TC7PB54FK CSON8-P-0.4 Weight CSON8-P-0.4: 0.002 g (typ.) SSOP8-P-0.50A: 0.01 g (typ.) top view top view 1234 Ch0 Ch1 Ch2 GND Marking TC7PB54FC 876 5 P00A 1234 1234 Ch0 Ch1 Ch2 GND TC7PB54FK 8 765 PB 54 1234 1 Start of commercial production 2006-07 2014-03-01 Truth Table Input A B L L H L L H H H Ch0 COM L L L Function Ch1 L COM L L Ch2 L L COM L System Diagram Ch0 Ch1 Ch2 Timing Chart A B Ch0 Ch1 Ch2 Note: COM = VCC 2 TC7PB54FC/FK A B Common 2014-03-01 TC7PB54FC/FK Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Power supply voltage DC input voltage (A, B) DC switch voltage (COM and Ch) Input diode current (A, B) Output diode current (COM and Ch) VCC VIN VS IIK −0.5 to 4.6 V −0.5 to 4.6 V −0.5 to VCC + 0.5 V −25 mA ±25 mA Switch I/O current (COM to Ch) IS 128 mA N-channel MOSFET current (Note 2) Power dissipation IOUT PD 25 mA 150 (CSON8) mW 200 (SSOP8) DC VCC/ground current Storage temperature ICC/IGND ±50 mA Tstg −65 to 150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, may lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: N-channel MOSFET allowable current to clamp the unused pin to ground. Operating Ranges (Note 1) Characteristics Symbol Rating Unit Power supply voltage Input voltage (A, B) DC switch voltage (COM and Ch) (Note 2) Operating temperature Input rise and fall time (A, B) VCC VIN VS Topr dt/dv 2.0 to 3.6 0 to 3.6 0 to VCC + 0.3 −40 to 85 0 to 10 V V V °C ns/V Note 1: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Note 2: Ensure that the voltages on the COM and Ch pins do not exceed VCC + 0.3 V even during a power-up sequence or when the power decreases. 3 2014-03-01 TC7PB54FC/FK Electrical Characteristics DC Electrical Characteristics (Ta = −40 to 85°C) Characteristics High-level input voltage Low-level input voltage Symbol VIH VIL Test Condition ⎯ ⎯ Min Typ. Max Unit VCC (V) 2.8 1.55 ⎯ ⎯ 2.3 1.50 ⎯ ⎯ V 2.8 ⎯ ⎯ 0.6 2.3 ⎯ ⎯ 0.5 Input leakage current (A, B) Off-state leakage current IIN A, B = 0 to 3.6 V IIZ COM, Ch = 0 to VCC 2.0 to 3.6 ⎯ 2.0 to 3.6 ⎯ ⎯ ±1.0 μA ⎯ ±1.0 μA Output diode current (COM and Ch) IIK COM, Ch = VCC − 0.3 V to VCC + 0.3 V 2.0 to 3.6 ⎯ ⎯ 100 μA VIS = 2.7 to 3.0 V, IIS = 3 mA (Note 1) 2.7 to 3.0 ⎯ 1.6 3 VIS = 2.3 V, IIS = 3 mA 2.3 ⎯ 2.1 5 Switch ON resistance (Note 1) RON Ω VIS =2.7 to 3.0 V, IIS = 30 mA (Note 2) 2.7 to 3.0 ⎯ 1.6 3 N-ch MOSFET ON resistance Increase in ICC per Input R ICC ICCT VIS = 2.3 V, IIS = 30 mA IL = 5 mA IL = 4 mA VIN = VCC or GND PER INPUT: VIN = 1.7 V 2.3 ⎯ 2.1 5 2.7 ⎯ ⎯ 50 Ω 2.3 ⎯ ⎯ 75 3.6 ⎯ ⎯ 10 μA 2.95 ⎯ ⎯ 25 μA Note 1: Measured by the voltage drop between the COM and Ch pins at the indicated current through the switch. On resistance is determined by the lower of the voltages on the two (COM or Ch) pins. Note 2: The typical value of .


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