N-Channel Shielded Gate Power Trench MOSFET
FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET
June 2013
FDMC8360L
N-Channel Shielded Gate Power Trench® MOSFE...
Description
FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET
June 2013
FDMC8360L
N-Channel Shielded Gate Power Trench® MOSFET
40 V, 80 A, 2.1 mΩ
Features
Shielded Gate MOSFET Technology Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A High performance technology for extremely low rDS(on) Termination is Lead-free 100% UIL Tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
DC-DC Conversion
Pin 1 Pin 1 S S S S G S S D D D G D D D D
D
Top
Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) TC = 25 °C TA = 25 °C (Note 1a) (Note 4) (Note 3) Ratings 40 ±20 80 27 240 294 54 2.3 -55 to +150 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 2.3 53 °C/W
Package Marking and Ordering Information
Device Marking FDMC8360L Device FDMC8360L Package Power33
1
Reel Size 13 ’’
Tape W...
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