FDMC8360L

FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET June 2013 FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET 40 V, 80 A, 2.1 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC-DC Conversion Pin 1 Pin 1 S S S S G S S D D D G D D D D D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) TC = 25 °C TA = 25 °C (Note 1a) (Note 4) (Note 3) Ratings 40 ±20 80 27 240 294 54 2.3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 2.3 53 °C/W Package Marking and Ordering Information Device Marking FDMC8360L Device FDMC8360L Package Power33 1 Reel Size 13 ’’ Tape W...