AOW7S65

AOW7S65/AOWF7S65 650V 7A α MOS TM Power Transistor General Description The AOW7S65 & AOWF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 30A 0.65Ω 9.2nC 2µJ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View Top View TO-262F D Bottom View G G D S S D G G D S S D G S AOW7S65 AOWF7S65 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOW7S65 650 ±30 7 5 30 1.7 43 86 104 0.8 100 20 -55 to 150 300 AOW7S65 65 0.5 1.2 AOWF7S65 Units V V 7* 5* A A mJ mJ 25 0.2 W W/ oC V/ns ° C ° C AOWF7S65 65 -5 Units ° C/W ° C/W ° C/W RθCS Maximum Case-to-sink A Maximum Junctio...