AOW7S60

AOW7S60/AOWF7S60 600V 7A α MOS TM Power Transistor General Description The AOW7S60 & AOWF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 33A 0.6Ω 8.2nC 1.9µJ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View TO-262F Top View Bottom View D G AOW7S60 D S S D G S G AOWF7S60 D S D G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D C AOW7S60 600 ±30 7 5 33 1.7 43 86 104 0.8 100 20 -55 to 150 300 AOW7S60 65 0.5 1.2 AOWF7S60 Units V V VGS TC=25° C TC=100° C ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA 7* 5* A A mJ mJ 25 0.2 W W/ oC V/ns ° C ° C AOWF7S60 65 -5 Units ° C/W ° C/W ° C/W RθCS Maximum Case-to-sink A Maximum J...