AOW482

AOW482 80V N-Channel MOSFET SDMOS TM General Description The AOW482 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 80V 105A < 7.2mΩ < 9mΩ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View D G G D S S D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C C TC=100° VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 80 ±25 105 82 330 11 9 82 336 333 167 2.1 1.3 -55 to 175 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 11 47 0.36 Max 15 60 0.45 Units ° C/W ° C/W ° C/W Rev0: June 2010 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AOW482 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA...