AOW11S65

AOW11S65/AOWF11S65 650V 11A α MOS TM Power Transistor General Description The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.9µJ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View Top View TO-262F D Bottom View G G D S S D G G D S S D G S AOW11S65 AOWF11S65 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter AOW11S65 Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOW11S65 65 0.5 0.63 198 1.6 11 8 AOWF11S65 650 ±30 11* 8* 45 2 60 120 28 0.22 Units V V A A mJ mJ W W/ oC V/ns ° C ° C 100 20 -55 to 150 300 AOWF11S65 65 -4.5 Units ° C/W ° C/W ° C/W RθCS Maximum Case-to-si...