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AOW11N60 Dataheets PDF



Part Number AOW11N60
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 11A N-Channel MOSFET
Datasheet AOW11N60 DatasheetAOW11N60 Datasheet (PDF)

AOW11N60 600V,11A N-Channel MOSFET General Description The AOW11N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V@150℃ 11A < 0.7Ω 100% UIS Tested .

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AOW11N60 600V,11A N-Channel MOSFET General Description The AOW11N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V@150℃ 11A < 0.7Ω 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View D G D S S D G G S AOW11N60 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C C AOW11N60 600 ±30 11 8.0 39 4.8 345 690 5 272 2.2 -55 to 150 300 AOW11N60 65 0.5 0.46 Units V V A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W ° C/W VGS TC=25° C TC=100° C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink Maximum Junction-to-Case A Rev 0: Jan 2012 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AOW11N60 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode Pulsed Current 1320 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 100 6.5 1.7 24 VGS=10V, VDS=480V, ID=11A 1656 146 11.2 3.5 30.6 9.6 9.6 39 VGS=10V, VDS=300V, ID=11A, RG=25Ω IF=11A,dI/dt=100A/µs,VDS=100V 400 4.7 58 92 42 500 5.9 600 7.1 ID=250µA, VGS=0V, TJ=25° C ID=250µA, VGS=0V, TJ=150° C ID=250µA, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125° C VDS=0V, VGS=±30V VDS=5V ID=250µA VGS=10V, ID=5.5A VDS=40V, ID=5.5A IS=1A,VGS=0V 3.3 3.9 0.6 12 0.73 1 11 39 1990 195 16 5.3 37 600 700 0.67 1 10 ±100 4.5 0.7 V V/ oC µA nΑ V Ω S V A A pF pF pF Ω nC nC nC ns ns ns ns ns µC Parameter Conditions Min Typ Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=4.8A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Jan 2012 www.aosmd.com Page 2 of 5 Free Datasheet http://www.datasheet4u.com/ AOW11N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10V 16 6.5V 100 VDS=40V -55°C 10 12 ID (A) 6V 8 1 4 VGS=5.5V 0.1 0 5 10 15 20 25 30 2 4 6 8 10 VDS (Volts) Fig 1: On-Region Characteristics 1.4 Normalized On-Resistance 3 2.5 2 1.5 1 0.5 0 0 12 16 20 24 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 4 8 -100 -50 0 50 100 150 200 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature VGS(Volts) Figure 2: Transfer Characteristics 25°C ID(A) 125°C 0 1.2 VGS=10V ID=5.5A RDS(ON) (Ω ) 1.0 0.8 VGS=10V 0.6 0.4 1.2 1.0E+02 1.0E+01 BVDSS (Normalized) 1.1 IS (A) 40 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 125°C 1 25°C 0.9 0.8 -100 -50 0 5.


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