DatasheetsPDF.com

AON2809 Dataheets PDF



Part Number AON2809
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 12V Dual P-Channel MOSFET
Datasheet AON2809 DatasheetAON2809 Datasheet (PDF)

AON2809 12V Dual P-Channel MOSFET General Description The AON2809 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) Typical ESD protection -12V -2A < 68mΩ < 90mΩ < 118mΩ HBM Class 2 DFN 2x2A Top View Bottom View D1 G2 S2 D1 D2 D2 Pin 1 G1 S1 Pin 1 D1 D2 G1.

  AON2809   AON2809



Document
AON2809 12V Dual P-Channel MOSFET General Description The AON2809 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) Typical ESD protection -12V -2A < 68mΩ < 90mΩ < 118mΩ HBM Class 2 DFN 2x2A Top View Bottom View D1 G2 S2 D1 D2 D2 Pin 1 G1 S1 Pin 1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D TA=25°C TA=70°C VGS ID IDM PD TJ, TSTG Maximum -12 ±8 -2 -1.6 -8 2.1 1.3 -55 to 150 Units V V A W °C Symbol t ≤ 10s Steady-State RθJA Typ 50 80 Max 60 100 Units °C/W °C/W Rev 0: Nov. 2012 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AON2809 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-12V, VGS=0V TJ=55°C VDS=0V, VGS= ±6V VDS=VGS, ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-2A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-2.5V, ID=-1A VGS=-1.8V, ID=-1A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-2A IS=-1A,VGS=0V -0.3 -8 55 72 70 90 8 -0.7 -1 -1.5 415 VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz 115 78 26 4.4 VGS=-4.5V, VDS=-6V, ID=-2A 0.8 0.9 11.8 VGS=-4.5V, VDS=-6V, RL=3Ω, RGEN=3Ω IF=-2A, dI/dt=100A/µs 24.5 54.5 37.3 21 5 68 89 90 118 -0.6 Min -12 -1 -5 ±10 -0.9 Typ Max Units V µA µA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(4.5) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on RθJA t ≤ 10s and the maxminum maximum allowed junction temperature of 150°C. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Nov. 2012 www.aosmd.com Page 2 of 5 Free Datasheet http://www.datasheet4u.com/ AON2809 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V 15 12 -ID (A) 10 VGS=-2V 5 4 25°C 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 140 Normalized On-Resistance 120 100 80 60 40 20 0 2 4 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 140 ID=-2A 120 100 RDS(ON) (mΩ ) 1E-01 -IS (A) 80 60 40 20 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 1E+00 125°C 25°C 1E+01 VGS=-4.5V VGS=-2.5V 1.6 VGS=-1.8V VGS=-2.5V ID=-1A VGS=-4.5V ID=-2A 1.2 VGS=-1.8V ID=-1A 0 0 1 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics -ID(A) -4.5V -2.5V 16 20 VDS=-5V 8 125°C 1.4 RDS(ON) (mΩ ) 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Rev0: Nov. 2012 www.aosmd.com Page 3 of 5 Free Datasheet http://www.datasheet4u.com/ AON2809 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VDS=-6V ID=-2A 4 Capacitance (pF) 500 Ciss 400 300 200 Coss 100 Crss 0 0 .


AON2803 AON2809 AON3406


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)