Document
AON2420
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS =10V) RDS(ON) (at VGS =4.5V) 30V 8A < 11.7mΩ < 17.5mΩ
Application
• DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial
DFN 2x2B Top View S Bottom View D D D S D Pin 1 G D G
D
S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current VDS Spike Power Dissipation A
C
Maximum 30 ±20 8 6 32 36 2.8 1.8 -55 to 150
Units V V A V W ° C
VGS TA=25° C TA=100° C 100ns TA=25° C TA=70° C ID IDM VSPIKE PD TJ, TSTG
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Symbol
t ≤ 10s Steady-State
RθJA
Typ 37 66
Max 45 80
Units ° C/W ° C/W
Rev0 : April 2012
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Free Datasheet http://www.datasheet4u.com/
AON2420
C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance Diode Forward Voltage VDS=5V, ID=8A IS=1A,VGS=0V TJ=125° C 1.2 1.8 9.6 13 13.6 41 0.7 1 3.5 552 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.7 227 28 3.4 8.9 VGS=10V, VDS=15V, ID=8A 4.3 1.5 1.7 4.8 VGS=10V, VDS=15V, RL=1.9Ω, RGEN=3Ω IF=8A, dI/dt=100A/µs 3.3 18.5 4.0 13.2 3.2 4.8 12 5.8 Min 30 1 5 ±100 2.2 11.7 15.8 17.5 Typ Max Units V µA nA V mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. B. The Power dissipation PD is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : April 2012
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Free Datasheet http://www.datasheet4u.com/
AON2420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80 10V 4.5V 60 40 4V ID (A) ID(A) 40 3.5V 20 20 VGS=3.0V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 20 16 RDS(ON) (mΩ ) 12 8 4 0 0 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 Normalized On-Resistance 10 0 0 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 30 125°C 25°C 60 50 VDS=5V
1.6
VGS=4.5V
1.4
VGS=10V ID=8A
1.2 VGS=4.5V ID=6A 1
VGS=10V
0.8 0 25 50 75 100 125 150 175 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
30 ±20
1.0E+01
25 ID=8A 20 125°C RDS(ON) (mΩ ) 15 IS (A)
1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 25°C
10
25°C
5
0 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 2
1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Rev0 : April 2012
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Free Datasheet http://www.datasheet4u.com/
AON2.