AON2401

AON2401 8V P-Channel MOSFET General Description The AON2401 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=-2.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) RDS(ON) (at VGS =-1.5V) RDS(ON) (at VGS =-1.2V) -8V -8A < 22mΩ < 28mΩ < 36mΩ < 53mΩ DFN 2x2B Top View S Bottom View D D D S D Pin 1 G D Pin 1 G D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Power Dissipation A C Maximum -8 ±5 -8 -6 -32 2.8 1.8 -55 to 150 Units V V A A W ° C VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Symbol t ≤ 10s Steady-State RθJA Typ 37 66 Max 45 80 Units ° C/W ° C/W Rev 0 : April. 2012 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AON2401 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-8V, VGS=0V C TJ=55° VDS=0V, VGS=±5V VDS=VGS, ID=-250µA VGS=-2.5V, VDS=-5V VGS=-2.5V, ID=-8A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=-1.8V, ID=-6A VGS=-1.5V, ID=-4A VGS=-1.2V, ID=-2A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-8A IS=-1A...