AON2290

AON2290 100V N-Channel MOSFET General Description Product Summary The AON2290 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) RDS(ON) (at VGS =10V) RDS(ON) (at VGS =4.5V) 100V 4.5A < 72mW < 97mW DFN 2x2B Top View Bottom View D D S D S Pin 1 G D D Pin 1 D G S Orderable Part Number AON2290 Package Type DFN 2x2B Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 4.5 3.5 25 2.8 1.8 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 37 66 6.5 Max 45 80 8.0 Units °C/W °C/W °C/W Rev.3.0: Feburary 2020 www.aosmd.com Page 1 of 6 AON2290 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold...