AOI478

AOD478/AOI478 100V N-Channel MOSFET General Description The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100V 11A < 140mΩ < 152mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D Bottom View Top View TO251A IPAK Bottom View D S G S G S D G S D G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 100 ±20 11 8 24 2.5 2 10 5 45 23 2.1 1.3 -55 to 175 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17 55 2.7 Max 25 60 3.3 Units ° C/W ° C/W ° C/W Rev 1: Nov. 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD478/AOI478 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol ...