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AOD478 Dataheets PDF



Part Number AOD478
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 100V N-Channel MOSFET
Datasheet AOD478 DatasheetAOD478 Datasheet (PDF)

AOD478/AOI478 100V N-Channel MOSFET General Description The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100V 11A < 140mΩ < 152mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D Bottom View To.

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AOD478/AOI478 100V N-Channel MOSFET General Description The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100V 11A < 140mΩ < 152mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D Bottom View Top View TO251A IPAK Bottom View D S G S G S D G S D G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 100 ±20 11 8 24 2.5 2 10 5 45 23 2.1 1.3 -55 to 175 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17 55 2.7 Max 25 60 3.3 Units ° C/W ° C/W ° C/W Rev 1: Nov. 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD478/AOI478 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=100V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=4.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=3A Forward Transconductance Diode Forward Voltage VDS=5V, ID=4.5A IS=1A,VGS=0V TJ=125° C 1.7 24 116 225 121 17 0.76 1 12 350 VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz 18 9 1 8 VGS=10V, VDS=50V, ID=4.5A 4 445 29 16 2 10.3 5.1 1.6 2.4 8 VGS=10V, VDS=50V, RL=8.6Ω, RGEN=3Ω IF=4.5A, dI/dt=500A/µs 14.5 68 3 17 4.5 21 97 27.5 126 540 35 23 3 13 6.5 140 270 152 2.2 Min 100 1 5 100 2.8 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Nov. 2011 www.aosmd.com Page 2 of 6 Free Datasheet http://www.datasheet4u.com/ AOD478/AOI478 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10V 10 ID (A) 4V 4.5V 6V ID(A) VGS=3.5V 3 25°C 0 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 0 1 2 3 4 5 6 9 6 125°C 15 VDS=5V 12 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 180 Normalized On-Resistance 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 6 8 10 ID (A) Figure 3.


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