AOD4182

AOD4182 80V N-Channel MOSFET TM SDMOS General Description The AOD4182 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=7V) 80V 53A < 15.5mΩ < 20mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D G Bottom View D S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH Power Dissipation B C C Maximum 80 ±25 53 38 85 8.5 6.8 45 101 100 50 2.5 1.6 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C TC=25°C TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 40 1 Max 20 50 1.5 Units °C/W °C/W °C/W Rev0: Jan 2010 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AOD4182 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Dra...