AOD4144

AOD4144 N-Channel SDMOSTM Power Transistor General Description The AOD4144 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Features VDS (V) =30V ID = 55A RDS(ON) < 8mΩ RDS(ON) < 14mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! Top View D TO-252 D-PAK Bottom View D S G S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG Maximum 30 ±20 55 43 110 13 10 30 45 50 25 2.3 1.4 -55 to 175 Units V V A Pulsed Drain Current C A A mJ W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 18 44 2.4 Max 22 55 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AOD4144 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symb...