AOD4132

AOD4132 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Top View D TO-252 D-PAK Bottom View Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 6mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! D GS SG G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C G Current B,G TC=100°C B VGS ID Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 63 200 30 112 100 50 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14.2 39 0.8 Max 20 50 1.5 Units V V A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4132 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VG...