AOI4130

AOD4130/AOI4130 60V N-Channel MOSFET General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 30A < 24mΩ < 30mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK TopView Bottom View Top View TO-251A IPAK Bottom View D D D D G S D S G G D S S D G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C C TC=100° VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 60 ±20 30 20 74 6.5 5 27 36.5 52 25 2.5 1.6 -55 to 175 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12.4 34 2.4 Max 20 50 2.9 Units ° C/W ° C/W ° C/W Rev 1: June 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD4130/AOI4130 Electrical Characteristics (TJ=25° C unless otherwis...