AOD4128

AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. The device can also be used in PWM, load switching and general purpose applications. Standard Product AOD412 8 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 25V (VGS = 10V) ID = 60 A RDS(ON) < 4 mΩ (VGS = 10V) RDS(ON) < 7 mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol V Drain-Source Voltage DS VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation Power Dissipation B C Maximum 25 ±20 60 60 165 45 304 75 37 2.0 1.3 -55 to 175 Units V V TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG A mJ W W °C TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady State Steady State RθJA RθJC Typ 18 50 1 Max 25 60 2 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AOD4128 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Condition...