AOD4104

AOD4104 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4104 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* TO-252 D-PAK Features VDS (V) = 25V ID = 75A (VGS = 10V) RDS(ON) < 3.6m Ω (VGS = 20V) RDS(ON) < 4.5m Ω (VGS = 12V) RDS(ON) < 5.4m Ω (VGS = 10V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D G S S G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G,I Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C TC=25°C G Maximum 25 ±30 75 75 200 30 135 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W °C Max 20 50 1.5 Units °C/W °C/W °C/W VGS TC=100°C ID IDM IAR EAR PD PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B Symbol RθJA RθJC Typ 16 40 1 Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AOD4104 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS= ...