MCD410

Freescale N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology AOD4 10/ MCD4 10 PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 59 @ VGS = 10V 30 88 @ VGS = 4.5V ID (A) 24 20 ABSOLUTE MAX IMUM RATING S (TA = 25 oC UNLESS OTHERW ISE NOTED) Sym bol Lim it Units Param eter VDS 30 Drain-Source Voltage V VGS ±20 G ate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o a o TC=25 C ID 24 75 30 50 IDM IS TC=25 C PD A A W o Continuous Source Current (Diode Conduction) Operating Junction and Storage Tem perature Range TJ, Tstg -55 to 175 C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Case a Maximum 50 3.0 Units o o RθJA RθJC C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ Freescale AOD4 10/ MCD4 10 SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Thr...