AOT284L

AOT284L/AOB284L 80V N-Channel MOSFET General Description Product Summary The AOT284L & AOB284L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested 80V 105A < 4.5mΩ < 5.7mΩ (< 4.3mΩ∗) (< 5.5mΩ∗) Top View TO220 Bottom View D D TO-263 D2PAK Top View Bottom View D D D G DS S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G Maximum 80 ±20 105 82 400 16 12.5 65 211 250 125 2.1 1.3 -55 to 175 G G S S Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 12 48 0.45 Max 15 60 0.6 Units °C/W °...