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AOB270AL

Alpha & Omega Semiconductors

75V N-Channel MOSFET

AOT270AL/AOB270AL 75V N-Channel MOSFET General Description The AOT270AL/AOB270AL uses Trench MOSFET technology that is ...


Alpha & Omega Semiconductors

AOB270AL

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Description
AOT270AL/AOB270AL 75V N-Channel MOSFET General Description The AOT270AL/AOB270AL uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 75V 140A < 2.6mΩ < 3.2mΩ (< 2.4mΩ ) (< 3.0mΩ ∗) ∗ 100% UIS Tested 100% Rg Tested TO220 Top View D D D Bottom Top View TO-263 Bottom View D D G D S S D G S G S G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C C Maximum 75 ±20 140 110 560 21.5 17 120 720 500 250 2.1 1.3 -55 to 175 Units V V A VGS TC=25° C C TC=100° TA=25° C C TA=70° ID IDM IDSM IAS EAS PD PDSM TJ, TSTG A A mJ W W ° C Avalanche energy L=0.1mH TC=25° C Power Dissipation Power Dissipation B TC=100° C TA=25° C TA=70° C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 50 0.25 Max 15 60 0.3 Uni...




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