AOB262L

AOT262L/AOB262L 60V N-Channel MOSFET General Description Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 6V) 60V 140A < 3.0mΩ < 3.2mΩ (< 2.8mΩ∗) (< 3.0mΩ∗) Applications Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO-220 Bottom View D D TO-263 D2PAK D Top View Bottom View D D G DS Orderable Part Number AOT262L AOB262L S DG Package Type TO-220 TO-263 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS, IAR EAS, EAR VDS Spike 10µs VSPIKE Peak diode recovery dv/dt dv/dt TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC S G Form Tube Tape & Reel Maximum 60 ±20 140 110 500 20 16 115 661 72 8 333 167 2.1 1.3 -55 to 175 G G S S Minimum Order Quantity 1000 800 Units V V A A A mJ V V/ns ...