60V N-Channel MOSFET
AOT2618L/AOB2618L/AOTF2618L
60V N-Channel MOSFET
General Description
The AOT2618L & AOB2618L & AOTF2618L uses trench MO...
Description
AOT2618L/AOB2618L/AOTF2618L
60V N-Channel MOSFET
General Description
The AOT2618L & AOB2618L & AOTF2618L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 23A < 19mΩ < 25mΩ
100% UIS Tested 100% Rg Tested
Top View TO-220 TO-220F D TO-263 D2PAK D
G D S AOTF2618L G D S AOB2618L G S S
AOT2618L
G
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter AOT2618L/AOB2618L Symbol Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current
C C
AOTF2618L
Units V V
VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 41.5 20.5 TC=25° C 23 18
±20 22 16 70 7 5.5 23 26 23.5 11.5 2.1 1.3 -55 to 175
A
A A mJ W W ° C
Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
AOT2618L/AOB2618L 15 60 3.6
AOTF261...
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