Document
AOT260L/AOB260L
60V N-Channel MOSFET
General Description
Product Summary
The AOT(B)260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =6V)
100% UIS Tested 100% Rg Tested
60V 140A < 2.5mW < 2.9mW
Top View
TO220 Bottom View
D D
Top View
TO-263 D2PAK
Bottom View
D D
D
G DS AOT260L
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current G
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S G
AOB260L
Maximum 60 ±20 140 110 500 20 16 128 819 330 165 1.9 1.2
-55 to 175
G S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 12 54 0.35
Max 15 65 0.45
G S
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Rev.2.0 : November 2013
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Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS VGS(th) ID(ON)
Gate-Body leakage current Gate Threshold Voltage On state drain current
ID=250mA, VGS=0V VDS=60V, VGS=0V
VDS=0V, VGS= ±20V VDS=VGS ID=250mA VGS=10V, VDS=5V VGS=10V, ID=20A TO220
TJ=55°C
TJ=125°C
60
2.2 500
2.7
2 3.1
V 1
mA 5 100 nA 3.2 V
A 2.5
mW 3.9
RDS(ON) Static Drain-Source On-Resistance
VGS=6V, ID=20A TO220
VGS=10V, ID=20A TO263
2.2 2.9 mW 1.7 2.2 mW
VGS=6V, ID=20A TO263
1.9 2.5 mW
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
VSD Diode Forward Voltage
IS=75A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
68 0.65 1 0.85 1.3
140
S V V A
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance
VGS=0V, VDS=30V, f=1MHz
9400 11800 14200 pF 1090 1360 1770 pF
Crss Reverse Transfer Capacitance Rg Gate resistance
f=1MHz
32 40 68 pF
0.5 1
1.5 W
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=20A
120 150 180 nC 28 40 52 nC
Qgd Gate Drain Charge
9 15 25 nC
tD(on)
Turn-On DelayTime
30 ns
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5W,
27
ns
tD(off)
Turn-Off DelayTime
RGEN=3W
74 ns
tf Turn-Off Fall Time
12 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/ms
22 32 42 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms
140 200 260 nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.
D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0 : November 2013
www.aosmd.com
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 10V
80 6V
100 VDS=5V
80
60 4V 60
ID(A)
ID (A)
40
20 Vgs=3.5V
0 01234 VDS (Volts) Fig 1: On-Region Characteristics (.