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AOT260L Dataheets PDF



Part Number AOT260L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 60V N-Channel MOSFET
Datasheet AOT260L DatasheetAOT260L Datasheet (PDF)

AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industria.

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AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =6V) 100% UIS Tested 100% Rg Tested 60V 140A < 2.5mW < 2.9mW Top View TO220 Bottom View D D Top View TO-263 D2PAK Bottom View D D D G DS AOT260L S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G AOB260L Maximum 60 ±20 140 110 500 20 16 128 819 330 165 1.9 1.2 -55 to 175 G S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 54 0.35 Max 15 65 0.45 G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.2.0 : November 2013 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current ID=250mA, VGS=0V VDS=60V, VGS=0V VDS=0V, VGS= ±20V VDS=VGS ID=250mA VGS=10V, VDS=5V VGS=10V, ID=20A TO220 TJ=55°C TJ=125°C 60 2.2 500 2.7 2 3.1 V 1 mA 5 100 nA 3.2 V A 2.5 mW 3.9 RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A TO220 VGS=10V, ID=20A TO263 2.2 2.9 mW 1.7 2.2 mW VGS=6V, ID=20A TO263 1.9 2.5 mW gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V VSD Diode Forward Voltage IS=75A,VGS=0V IS Maximum Body-Diode Continuous CurrentG 68 0.65 1 0.85 1.3 140 S V V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 9400 11800 14200 pF 1090 1360 1770 pF Crss Reverse Transfer Capacitance Rg Gate resistance f=1MHz 32 40 68 pF 0.5 1 1.5 W SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=30V, ID=20A 120 150 180 nC 28 40 52 nC Qgd Gate Drain Charge 9 15 25 nC tD(on) Turn-On DelayTime 30 ns tr Turn-On Rise Time VGS=10V, VDS=30V, RL=1.5W, 27 ns tD(off) Turn-Off DelayTime RGEN=3W 74 ns tf Turn-Off Fall Time 12 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/ms 22 32 42 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms 140 200 260 nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0 : November 2013 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 80 6V 100 VDS=5V 80 60 4V 60 ID(A) ID (A) 40 20 Vgs=3.5V 0 01234 VDS (Volts) Fig 1: On-Region Characteristics (.


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